دیتاشیت NTMFS4C10NT1G

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دانلود دیتاشیت NTMFS4C10N	NTMFS4C10N Datasheet

RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NTMFS4C10NT1G
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 750mW;23.6W
Total Gate Charge (Qg@Vgs): 9.7nC@4.5V
Drain Source Voltage (Vdss): 30V
Input Capacitance (Ciss@Vds): 987pF@15V
Continuous Drain Current (Id): 8.2A
Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
Reverse Transfer Capacitance (Crss@Vds): -
Drain Source On Resistance (RDS(on)@Vgs,Id): 6.95mΩ@30A,10V
Package: SO-8FL
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 987pF @ 15V
FET Feature: -
Power Dissipation (Max): 750mW (Ta), 23.6W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN
Base Part Number: NTMFS4
detail: N-Channel 30V 8.2A (Ta) 750mW (Ta), 23.6W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)